Communication-concepts 2N6488 User Manual

Browse online or download User Manual for Hardware Communication-concepts 2N6488. Communication Concepts 2N6488 User Manual

  • Download
  • Add to my manuals
  • Print
  • Page
    / 6
  • Table of contents
  • BOOKMARKS
  • Rated. / 5. Based on customer reviews
Page view 0
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 14
1 Publication Order Number:
2N6487/D
2N6487, 2N6488, (NPN)
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in generalpurpose amplifier and
switching applications.
Features
DC Current Gain Specified to 15 Amperes
h
FE
= 20150 @ I
C
= 5.0 Adc
= 5.0 (Min) @ I
C
= 15 Adc
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 60 Vdc (Min) 2N6487, 2N6490
= 80 Vdc (Min) 2N6488, 2N6491
High Current Gain Bandwidth Product
f
T
= 5.0 MHz (Min) @ I
C
= 1.0 Adc
TO220AB Compact Package
PbFree Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
CollectorEmitter Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CEO
60
80
Vdc
CollectorBase Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CB
70
90
Vdc
EmitterBase Voltage V
EB
5.0 Vdc
Collector Current Continuous I
C
15 Adc
Base Current I
B
5.0 Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
75
0.6
W
W/°C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
P
D
1.8
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
1.67
_C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
70
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080 VOLTS, 75 WATTS
TO220AB
CASE 221A
STYLE 1
1
2
3
4
http://onsemi.com
MARKING
DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Page view 0
1 2 3 4 5 6

Summary of Contents

Page 1 - Plastic Power Transistors

© Semiconductor Components Industries, LLC, 2011October, 2011 − Rev. 141 Publication Order Number:2N6487/D2N6487, 2N6488, (NPN)2N6490, 2N6491 (PNP)Co

Page 2 - ELECTRICAL CHARACTERISTICS (T

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com2804020020 40 80 100 120 160Figure 1. Power DeratingTC, CASE TEMPERATURE (°C)PD, POWER DISS

Page 3 - Figure 4. Thermal Response

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com3Figure 2. Switching Time Test Circuit1000Figure 3. Turn−On TimeIC, COLLECTOR CURRENT (AMP)

Page 4

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com4SECOND BREAKDOWN LIMITEDBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°C20Figure 5. Activ

Page 5 - Figure 10. “On” Voltages

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com5VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)5.0 100IC = 1.

Page 6 - PACKAGE DIMENSIONS

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)http://onsemi.com6PACKAGE DIMENSIONSTO−220CASE 221A−09ISSUE AGNOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Comments to this Manuals

No comments